Ekhaya
Iimveliso
I-aluminiyamu ye-silicon carbide inxalenye yesakhiwo esetyenziselwa ukuhamba ngeenqwelomoya, i-aerospace, iinqanawa zaseLwandle, uhambo lukaloliwe, indawo yezithuthi zamandla amatsha.
Ukuthelekiswa kweepropathi ze-AISIC kunye nentsimbi yesiko kunye nemathiriyeli ye-ceramic:
| ialluminiyam (7050) | ingxubevange yetitanium(TC4) | intsimbi engatyiwa (SUS304) | I-SIC | Alumina | I-AISiC | |
| Ubuninzi (g/cm3) | 2.8 | 4.5 | 7.9 | 3.2 | 3.97 | 2.8-3.2 |
| Amandla okwandisa (MPa) | ≥496 | ≥985 | ≥520 | - | - | 270-450 |
| Imodyuli yokuqina (Gpa) | 69 | 110 | 210 | 330 | 300 | 160-280 |
| Amandla okugoba (Mpa) | - | - | - | 350-600 | 290 | 230-450 |
| I-Coefficient yolwandiso lomgca(×10/℃) | amashumi amabini anesine | 8.6 | 17.3 | 4.5 | 7.2 | 4.5-16 |
| I-Thermal conductivity (W/m·K) | 154-180 | 8 | 15 | 126 | 20 | 163-255 |
Umzimba ophakathi kunye nophezulu we-aluminium silicon carbide izinto ezihlanganisiweyo esizifumene kuhlobo olutsha lokulungisa umsebenzi ongenawo isigaba sojongano, oluthintela ngokufanelekileyo iintsilelo ze-brittleness yezixhobo ze-ceramic ze-ceramic composite, kwaye iphucula kakhulu ukusebenza kunye noluhlu lwezicelo zezixhobo.
1. I-Aluminiyam i-silicon carbide - iinxalenye zesakhiwo
Amandla aphezulu-amandla aphezulu-aneempawu zobunzima, ukuqina okuphezulu, ukuzinza komda, ukuxhathisa ukunxiba kunye nokumelana nokugqwala, endaweni ye-aluminium alloy, insimbi engenasici, i-titanium alloy, esetyenziselwa ukuchaneka okuphezulu, ukunxitywa kwesakhiwo esinemfuno ezichaseneyo. .
| Ubuninzi (g/cm3) | Amandla okugoba(MPa) | Imodyuli yokuqina (GPa) | Umlinganiselo wobude (%) | Umlinganiselo wokudambisa(ζ,%) | I-Thermal conductivity(W/m·K)@25℃ | I-Coefficient yolwandiso lomgca(×10/℃) 25-200℃ | |
| S45 SiC/AI | 2.925 | 298 | 172 | 1.2 | 0.42 | 203 | 11.51 |
| S50 SiC/AI | 2.948 | 335 | 185 | / | 0.52 | 207 | 10.42 |
| S55 SiC/AI | 2.974 | 405 | 215 | / | 0.66 | 210 | 9.29 |
| S60 SiC/AI | 2.998 | 352 | 230 | / | 0.7 | 215 | 8.86 |
2. I-Aluminiyam i-silicon carbide - inxalenye yokutshatyalaliswa kobushushu
I-Microelectronic ukupholisa i-substrate / iqokobhe: i-aluminium silicon carbide yaziwa njengesizukulwana sesithathu sezinto zokupakisha ze-elektroniki ngenxa yeempawu zayo eziphezulu ze-thermal, kwaye isetyenziswa ngokubanzi kwibala lokupakisha nge-elektroniki (isizukulwana sokuqala esinjenge-aluminium, ubhedu; Isizukulwana sesibini esinjalo njenge-Kewa, i-molybdenum yobhedu, i-alloy tungsten yobhedu .... njl.
| Ubuninzi (g/cm) | Amandla okugoba(MPa) | Imodyuli yokuqina (GPa) | Thermal conductivity(W/m·K) @25℃ | I-Coefficient yolwandiso lomgca(×10°/℃) 25-200°℃ | |
| T60SIC/AI | 2.998 | 260 | 229 | 220 | 8.64 |
| T65SIC/AI | 3.018 | 255 | 243 | 236 | 7.53 |
| T70SIC/AI | 3.05 | 251 | 258 | 217 | 6.8 |
| T75SIC/AI | 3.068 | 257 | 285 | 226 | 5.98 |
Iinzuzo zeMveliso: I-conductivity ephezulu ye-thermal, i-surface function diversified design, i-coefficient yokwandisa i-thermal ephantsi (efana ne-coefficient yokwandisa i-thermal yezinto ze-chip) I-porosity ye-welding ephantsi.
I-IGBT i-package base plate: I-thermal conductivity ye-aluminium silicon carbide iphezulu kwaye iphantsi kwe-coefficient yokwandisa i-thermal (i-coefficient yokwandisa i-thermal ifana ne-chip material), ukunciphisa ngokufanelekileyo amathuba okuqhekeka kweesekethe zephakheji, ukuphucula ubomi benkonzo yemveliso. Kwi-high-speed rail, izithuthi zamandla amatsha, i-radar, ukuveliswa kwamandla omoya ukuthatha indawo ye-aluminium, ubhedu, i-tungsten yobhedu, i-molybdenum yobhedu, i-beryllium, i-ceramics kunye nezinye izinto zokupakisha ze-microelectronics.
| Izinto eziphathekayo | Ubuninzi (g/cm*) | Umlinganiso wokwandiswa komgama(x 10°/ ° C) | I-Thermal conductivity (W/m·K) | Ukuqina okuthe ngqo(Gpa cm/g) |
| I-AISIC | 2.8-3.2 | 4.5-16 | 163-255 | 76-108 |
| Nge | 8.9 | 17 | 393 | 5 |
| I-AI (6061) | 2.7 | amashumi amabini anantathu | 171 | 25 |
| Ijenali | 8.3 | 5.9 | 14 | 16 |
| Invar | 8.1 | 1.6 | 11 | 14 |
| Cu/Mo(15/85) | 10 | 7 | 160 | 28 |
| Cu/W(15/85) | 17 | 7.2 | 190 | 16 |