Ingxenye yesakhiwo se-aluminium silicon carbide esetshenziselwa izindiza, i-aerospace, imikhumbi yasolwandle, ezokuthutha ngojantshi, inkambu yezimoto zamandla amasha
Ukuqhathaniswa kwezakhiwo ze-AISIC ngensimbi yendabuko nezinto zobumba:
ingxubevange ye-aluminium (7050) | ingxubevange ye-titanium(TC4) | i-stainless stee(SUS304) | I-SIC | I-Alumina | I-AISiC | |
Ukuminyana (g/cm3) | 2.8 | 4.5 | 7.9 | 3.2 | 3.97 | 2.8-3.2 |
Amandla esandiso (MPa) | ≥496 | ≥985 | ≥520 | - | - | 270-450 |
I-Elasticity modulus (Gpa) | 69 | 110 | 210 | 330 | 300 | 160-280 |
Amandla okugoba (Mpa) | - | - | - | 350-600 | 290 | 230-450 |
I-coefficient yokunwetshwa komugqa(×10/℃) | amashumi amabili nane | 8.6 | 17.3 | 4.5 | 7.2 | 4.5-16 |
I-Thermal conductivity (W/m·K) | 154-180 | 8 | 15 | 126 | 20 | 163-255 |
Izinto eziyinhlanganisela ye-aluminium ye-silicon carbide ephakathi nendawo nephezulu esizithathele ekulungiseni umsebenzi wohlobo olusha ongenaso isigaba sokusebenzisana, okugwema ngempumelelo ukushiyeka kokuqina kwezinto eziyinhlanganisela yensimbi yobumba, futhi kuthuthukisa kakhulu ukusebenza kokucubungula kanye nobubanzi bokusetshenziswa kwezinto.
1. I-aluminium silicon carbide - izingxenye zesakhiwo
Izingxenye zesakhiwo ezinembayo ezinamandla aphezulu - ezinezici zesisindo esingasindi, ukuqina okuphezulu, ukuzinza kwe-dimensional, ukumelana nokugqokwa nokumelana nokugqwala, esikhundleni se-aluminium alloy, insimbi engagqwali, ingxubevange ye-titanium, esetshenziswa ngokunemba okuphezulu, izingxenye zesakhiwo ezingagugi ezinezidingo eziphikisanayo. .
Ukuminyana (g/cm3) | Amandla okugoba(MPa) | I-Modulus of elasticity (GPa) | Izinga lobude (%) | I-Damping ratio(ζ,%) | I-Thermal conductivity(W/m·K)@25℃ | I-coefficient yokunwetshwa komugqa(×10/℃) 25-200℃ | |
I-S45 SiC/AI | 2.925 | 298 | 172 | 1.2 | 0.42 | 203 | 11.51 |
I-S50 SiC/AI | 2.948 | 335 | 185 | / | 0.52 | 207 | 10.42 |
I-S55 SiC/AI | 2.974 | 405 | 215 | / | 0.66 | 210 | 9.29 |
I-S60 SiC/AI | 2.998 | 352 | 230 | / | 0.7 | 215 | 8.86 |
2. I-aluminium silicon carbide - ingxenye yokushisa ukushisa
I-Microelectronic cooling substrate/igobolondo: i-aluminium silicon carbide yaziwa njengesizukulwane sesithathu sezinto zokupakisha ze-elekthronikhi ngenxa yezakhiwo zayo ezishisayo ezishisayo, futhi isetshenziswa kabanzi emkhakheni wokupakisha ngogesi (isizukulwane sokuqala njenge-aluminium, ithusi; Isizukulwane sesibili esinjalo njenge-Kewa, i-molybdenum yethusi, ingxube ye-tungsten yethusi .... njll).
Ukuminyana(g/cm) | Amandla okugoba(MPa) | I-Modulus of elasticity (GPa) | I-Thermal conductivity(W/m·K) @25℃ | I-coefficient yokunwetshwa komugqa(×10°/℃) 25-200°℃ | |
I-T60SIC/AI | 2.998 | 260 | 229 | 220 | 8.64 |
I-T65SIC/AI | 3.018 | 255 | 243 | 236 | 7.53 |
I-T70SIC/AI | 3.05 | 251 | 258 | 217 | 6.8 |
I-T75SIC/AI | 3.068 | 257 | 285 | 226 | 5.98 |
Izinzuzo zomkhiqizo: I-thermal conductivity ephezulu, i-surface function diversified design, I-coefficient yokwandisa ukushisa okuphansi (okufana ne-coefficient yokwandisa okushisayo kwezinto ze-chip) I-porosity ye-welding ephansi.
Ipuleti lesisekelo sephakheji le-IGBT: I-thermal conductivity ye-aluminium silicon carbide iphezulu futhi iphansi ye-thermal expansion coefficient (i-thermal expansion coefficient ifana nempahla ye-chip), inciphisa ngempumelelo amathuba okuqhekeka kwesekethe yephakheji, ithuthukise impilo yesevisi yomkhiqizo. Kusitimela esinesivinini esikhulu, izimoto zamandla amasha, i-radar, ukukhiqiza amandla omoya esikhundleni se-aluminium, ithusi, i-tungsten yethusi, i-copper molybdenum, i-beryllium, i-ceramics nezinye izinto zokupakisha ze-microelectronics.
Izinto zokwakha | Ukuminyana (g/cm*) | I-coefficient yokunwetshwa komugqa(x 10°/ ° C) | I-Thermal conductivity (W/m·K) | Ukuqina okuqondile(Gpa cm/g) |
I-AISIC | 2.8-3.2 | 4.5-16 | 163-255 | 76-108 |
Nge | 8.9 | 17 | 393 | 5 |
I-AI (6061) | 2.7 | amashumi amabili nantathu | 171 | 25 |
Ijenali | 8.3 | 5.9 | 14 | 16 |
I-Invar | 8.1 | 1.6 | 11 | 14 |
I-Cu/Mo(15/85) | 10 | 7 | 160 | 28 |
I-Cu/W(15/85) | 17 | 7.2 | 190 | 16 |