Explore the third generation of semiconductor gallium nitride

Gallium nitride is a semiconductor material composed of nitrogen and gallium, and its band gap width is greater than 2.2eV, so it is also known as wide band gap semiconductor material. It is an excellent material for microwave power transistors and a semiconductor with important application value in blue light-emitting devices.

As a representative of the third generation of semiconductor materials, gallium nitride can be applied to 5G networks, fast charging, commercial wireless infrastructure, power electronics and satellite markets, and has a broad prospect due to its high power, high radiation resistance, high efficiency and high frequency characteristics.

So what exactly is gallium nitride?

1,Gallium nitride principle

Gallium nitride is a wide bandgap semiconductor material with unique electronic structure and physical properties. Its large bandgap means that it can operate stably at higher temperatures, higher voltages and stronger radiation environments. At the same time, gallium nitride has high electron mobility and high saturation electron velocity, which gives it a huge advantage in high-frequency, high-power electronic devices.

2, Dimension

Gallium nitride has a variety of specifications and sizes, which can be customized according to different application requirements. At present, common gallium nitride device sizes include chip level, package level and module level. For example, in smartphone chargers, the size of gallium nitride chips is usually very small, while in high-power power electronics, the size of gallium nitride modules is relatively large.

3, application scene

- Consumer electronics

Smartphone charger: Gallium nitride charger has the advantages of small size, light weight and fast charging speed. Compared with traditional chargers, gallium nitride chargers can achieve higher power output in a smaller volume, bringing users a more convenient charging experience.

Laptop power adapter: Gallium nitride power adapter also has the characteristics of small size and high efficiency, which can provide a stable power supply for laptops.

- The field of new energy vehicles

Car chargers and charging piles: Gallium nitride technology can improve the power density and efficiency of in-vehicle chargers and charging piles, shorten the charging time, and provide strong support for the popularity of electric vehicles.

Automotive electronic systems: Gallium nitride devices can also be applied to automotive lighting, audio, navigation and other electronic systems to improve the performance and reliability of the system.

- Communication field

 5G base stations: Gallium nitride power amplifiers have important application value in 5G base stations. It can provide higher power output and better linearity, meeting the requirements of 5G communication for high speed, large capacity and low latency.

Satellite communications: Gallium nitride devices also have a wide range of applications in satellite communications. It can work stably in the harsh space environment and provide reliable signal transmission for satellite communications.

- Industrial field

Motor drive: Gallium nitride inverters can improve the efficiency and power density of motor drive systems, reducing energy consumption and costs.

Solar inverters: Gallium nitride solar inverters can convert direct current generated by solar panels into alternating current, improving the efficiency and reliability of solar power generation systems.

FOUNTYL TECHNOLOGIES PTE. LTD., specialized at ceramic material forming, sintering & machining technology, serving semiconductor users, products are silicon carbide chuck, porous ceramic vacuum chuck, air floating table, ceramic end effector and ceramic guide rail, welcome to contact us for further potential business cooperation.

4, Analysis of industry chain

The industry chain of gallium nitride is similar to that of silicon carbide, mainly including single crystal substrate, epitaxial layer growth, device design, manufacturing and other links. At present, the leading enterprises in the industry are based on the IDM model (set design, manufacturing, packaging and testing to sales in one), but the design and manufacturing links have begun to appear division of labor.

From the perspective of gallium nitride industry chain companies, foreign companies maintain a large lead in technical strength and production capacity. Although Chinese enterprises have initially formed the layout of the whole industrial chain, their market share and technical level are still relatively backward. Foreign key enterprises include Sumitomo of Japan, Cree of the United States, Infineon of Germany, LG of South Korea, Samsung and so on. Chinese enterprise representatives include Crystal Optoelectronics, SAN 'an Optoelectronics, TSMC, Huacan Optoelectronics and so on.

In terms of gallium nitride substrate & epitaxy, the substrates used in gallium nitride devices mainly include silicon carbide substrate, silicon substrate, sapphire substrate, gallium nitride substrate and so on. GaN-on-SiC epitaxial sheet prepared by growing gallium nitride epitaxial layer on silicon carbide substrate can be made into RF devices, which have the advantages of higher efficiency, greater bandwidth, and higher power, and can better meet the high requirements for RF devices in military/civil fields such as 5G macrobase stations, satellite communications, microwave radar, and aerospace.

Gallium nitride epitaxial sheets can be divided into homogeneous epitaxial sheets and heterogeneous epitaxial sheets. Gallium nitride single crystal substrate is a homogeneous epitaxial sheet. Using Gallium nitride single crystal material as substrate can greatly improve the crystal quality of epitaxial film, reduce the dislocation density, and increase the device service life.

At present, the industry usually uses sapphire, SiC, silicon as the substrate, mainstream GaN device companies are using SiC substrate, from a global point of view, Japanese manufacturers in the GaN substrate market share of more than 80%. At present, the domestic enterprises that realize the industrialization of gallium nitride substrate mainly include Suzhou Nawei, China Gallium Semiconducting, Shanghai Gallium Special and core Yuan Base. SiC substrate mainly includes Tianke Heda, Tianyue, CEC, etc.; The layout of GaN epitaxial enterprises are mainly Suzhou Jingzhan, poly crystal source and so on.

In terms of gallium nitride devices, the cost of GaN devices on silicon nitride substrates is 100 times higher than that on silicon substrates, and the substrate processing time difference is 200-300 times. However, silicon wafers continue to expand to larger sizes, and it is expected that the cost of silicon-based GaN devices will be reduced by 30% to 50%.

In terms of device design and manufacturing, Sumitomo Electric and Cree are leaders, with a market share of 30% each. The domestic GaN device IDM enterprises include Suzhou Nexun, Innosec, Dalian Core Crown, etc. Haiwei Core, SAN An integration to provide GaN device foundry. CLP 13, 55 also have GaN device manufacturing capabilities; Shilanwei, Century Golden Light, Taike Tianrun are also IDM mode. Companies that adopt the Fabless model (only responsible for design, not for production) include GaNSystem, EPC, Dialog, etc., which is contracted by TSMC. SAN 'an Optoelectronics, Wentai Technology, Sai Microelectronics, Jucan Optoelectronics, dry light Optoelectronics, etc. are the main manufacturers of GaN devices in China.

5, Top ten enterprises in the head

1. Infineon: the world's leading supplier of semiconductor solutions, with strong technical strength and market share in the field of gallium nitride power devices.
2. STMicroelectronics: A well-known semiconductor manufacturer whose gallium nitride products are widely used in consumer electronics, automotive electronics and industrial fields.
3. Navitas: focusing on the development and production of gallium nitride power chips, to provide customers with high-performance, high-reliability gallium nitride solutions.
4. Texas Instruments: One of the giants in the semiconductor industry, also has in-depth research and layout in gallium nitride technology.
5. ON Semiconductor: Provides comprehensive semiconductor solutions, and its gallium nitride products perform well in power management, automotive electronics and other fields.
6. Fuji Electric: a well-known electronics manufacturer in Japan, with rich experience and technical accumulation in the field of gallium nitride power devices.
7. Mitsubishi Electric: It has a high reputation in the field of power electronics, and its gallium nitride products are widely used in industrial and transportation fields.
8. Rohm Semiconductor (Rohm) : focusing on the research and development and production of semiconductors and electronic components, its gallium nitride products have a wide range of applications in consumer electronics and automotive electronics.
9. Sumitomo Electric Industries: a Japanese integrated electronics manufacturer with leading technology in gallium nitride materials and devices.
10. Cree: a world-renowned semiconductor manufacturer known for its innovations in silicon carbide and gallium nitride technology.

As a new industry, gallium nitride is in a stage of rapid development. With the application of gallium nitride will continue to expand, bringing more convenience and innovation to our lives.

FOUNTYL TECHNOLOGIES PTE. LTD., specialized at ceramic material forming, sintering & machining technology, serving semiconductor users, products are silicon carbide chuck, porous ceramic vacuum chuck, air floating table, ceramic end effector and ceramic guide rail, welcome to contact us for further potential business cooperation.