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I-silicon carbide esetshenziselwa izingxenye ezimelana nokugqwala, izingxenye zezimpawu, izingxenye ezimelana nokushisa okuphezulu, ama-rails aqondisayo kanye nemishayo yesikwele.
Ama-ceramics e-silicon carbide anezakhiwo ezinhle kakhulu zemishini ekushiseni okujwayelekile, njengamandla aphezulu, ukuqina okuphezulu, i-modulus ephezulu yokunwebeka, ukuzinza okuhle kakhulu kwezinga lokushisa eliphezulu, njengokuhamba okuphezulu kwe-thermal, i-coefficient ephansi yokwandisa okushisayo, nokuqina okuhle okuqondile kanye nezakhiwo zokucubungula optical, ezifanele ikakhulukazi. ukulungiswa komshini we-photolithography nezinye izinto ezididiyelwe zesekethe zezingxenye zesakhiwo se-ceramic ngokunemba. Njengokusetshenziswa emshinini we-photolithography ukunemba okunyakazayo kwetafula lokusebenzela, uhlaka lwamathambo, inkomishi yokumunca, ipuleti elipholile ngamanzi nesibuko sokulinganisa ngokunemba, igridi nezinye izingxenye zesakhiwo se-ceramic, i-Fountyl impahla entsha ngemuva kweminyaka yocwaningo lobuchwepheshe, ukuxazulula usayizi omkhulu, udonga oluncane, uhlaka olungenalutho kanye nolunye oluyinkimbinkimbi lwezingxenye zesakhiwo se-silicon carbide ukunemba kokucubungula kanye nezinkinga zokulungisa, ukugqekeza ibhodlela lobuchwepheshe lalolu hlobo lobuchwepheshe bokulungiselela izingxenye ze-silicon carbide ngokunemba. Ikhuthaze kakhulu ukwenziwa kwasendaweni kwezingxenye ezibalulekile zesakhiwo ezisetshenziswa kumishini yokukhiqiza isekethe edidiyelwe.
● Izitsha zobumba ze-silicon carbide ikakhulukazi zihlanganisa i-sintering silicon carbide (SSiC), i-react-sintered silicon carbide (RBSC), i-chemical vapor deposition silicon carbide (CVD-SiC).
● I-silicon carbide inezinto ezihlukahlukene ezinhle kakhulu: i-super hard, ukumelana nokugqoka, ukuguquguquka okuphezulu kwe-thermal namandla emishini, i-coefficient ephansi yokwandisa ukushisa okushisayo, ukuzinza okuhle kakhulu kokushisa, ukuminyana okuphansi, ukuqina okuqondile okuphezulu, okungeyona i-magnetic.
● Njengamanje, izinto zobumba ze-silicon carbide ceramics zisetshenziswa ezimbonini ezihlukahlukene ezifana nezindiza, i-aerospace kanye nemboni ye-nuclear, njengezingxenye ze-ceramic zamathuluzi asezingeni eliphezulu we-silicon carbide ceramic reflector kanye nokukhiqizwa kwesekethe ehlanganisiwe ye-IC, izishintshisi zokushisa nezinto ezivikela izinhlamvu ngaphansi kwezimo ezimbi kakhulu.
Izici zezingxenye zokunemba ze-ceramic zesakhiwo semishini ehlanganisiwe yokukhiqiza isekethe:
① Isisindo esincane kakhulu: Ukuze unciphise ukungahambi kahle kokunyakaza, unciphise umthwalo wemoto, uthuthukise ukusebenza kahle kokunyakaza, ukunemba kokuma kanye nokuzinza, izingxenye zesakhiwo ngokuvamile zisebenzisa ukwakheka kwesakhiwo esingasindi, isilinganiso esingasindi singu-60-80%, sifika ku-90%;
② Ukunemba kwefomu eliphezulu: Ukuze kuzuzwe ukunyakaza okunemba okuphezulu nokuma, izingxenye zesakhiwo kudingeka zibe nefomu eliphezulu kakhulu nokunemba kwesikhundla, ukucaba, ukufana kanye ne-perpendicularity kuyadingeka ukuthi kube ngaphansi kuka-1μm, futhi ifomu kanye ukunemba kwesikhundla kuyadingeka ukuthi kube ngaphansi kuka-5μm.
③ Ukuzinza kobukhulu obuphakeme: Ukuze kuzuzwe ukunyakaza nokunemba okuphezulu nokuma, izingxenye zesakhiwo zidingeka ukuba zibe nokuzinza okuphezulu kakhulu, zingakhiqizi ubunzima, nokuhanjiswa okuphezulu kwe-thermal, i-coefficient ephansi yokwanda kwe-thermal, akulula ukukhiqiza ukuguquguquka okukhulu kwe-dimensional. ;
④ Hlanza futhi akungcolisi. Izingxenye zesakhiwo kudingeka zibe ne-coefficient ephansi kakhulu yokungqubuzana, ukulahlekelwa amandla amancane e-kinetic ngesikhathi sokunyakaza, futhi kungabikho ukungcoliswa kwezinhlayiyana zokugaya. I-silicon carbide impahla ine-modulus enwebekayo ephezulu kakhulu, i-thermal conductivity kanye ne-coefficient ephansi yokwandisa okushisayo, akulula ukukhiqiza ukuguquguquka kokucindezeleka okugobayo kanye nokucindezeleka okushisayo, futhi inokupholisa okuhle kakhulu, kungenziwa ngomshini ukuze kube nesibuko esihle kakhulu; Ngakho-ke, kunezinzuzo ezinhle zokusebenzisa i-silicon carbide njengento eqondile yesakhiwo semishini ebalulekile yamasekethe ahlanganisiwe njengomshini we-photolithography, i-Silicon carbide inezinzuzo zokuzinza okuhle kwamakhemikhali, amandla aphezulu emishini, ukuqhutshwa kwe-thermal ephezulu kanye ne-coefficient ephansi yokwandisa okushisayo, futhi ingasetshenziswa ekushiseni okuphezulu, ukucindezela okuphezulu, ukugqwala kanye nemisebe yezindawo ezimbi kakhulu.
I-Silicon carbide inezinzuzo zokuzinza okuhle kwamakhemikhali, amandla aphezulu emishini, ukuqhutshwa kokushisa okuphezulu kanye ne-coefficient ephansi yokwandisa ukushisa, futhi ingasetshenziswa ekushiseni okuphezulu, ukucindezela okukhulu, ukugqwala kanye nemisebe yezindawo ezimbi kakhulu.
Imishini eyisihluthulelo yesifunda esihlanganisiwe idinga ukuthi izinto zengxenye zibe nezici zesisindo sokukhanya, amandla aphezulu, i-conductivity ephezulu ye-thermal kanye ne-coefficient ephansi yokwandisa okushisayo, futhi iminyene futhi ifanayo ngaphandle kwamaphutha. Izingxenye kudingeka zibe nokunemba okuphezulu kakhulu kobukhulu kanye nokuzinza kobukhulu ukuze kuqinisekiswe ukunyakaza okunembe kakhulu nokulawula okokusebenza. I-silicon carbide ceramics ine-modulus enwebekayo ephezulu kanye nokuqina okuthile, akulula ukuyilimaza, futhi ine-conductivity ephezulu yokushisa kanye ne-coefficient ephansi yokwandisa ukushisa, ukuqina okuphezulu kokushisa, ngakho-ke i-silicon carbide ceramics iyinto enhle kakhulu yesakhiwo, okwamanje ekukhiqizweni kwesekethe ehlanganisiwe. izinto zokusebenza eziyisihluthulelo zokuthola izinhlelo zokusebenza eziningi, njengomshini we-lithography onetafula lokusebenza le-silicon carbide, isitimela somhlahlandlela, i-reflector, i-ceramic chuck, ne-ceramic end effector.
I-Fountyl ingahlangabezana nomshini we-photolithography njengommeleli wemishini eyinhloko yokukhiqiza isekethe enosayizi omkhulu, udonga oluncane olungenalutho, isakhiwo esiyinkimbinkimbi, ubuchwepheshe bokulungisa izingxenye ze-silicon carbide, njenge-silicon carbide vacuum chuck, isitimela somhlahlandlela, isibonisi, ithebula lokusebenza. kanye nochungechunge lwezingxenye zokunemba ze-silicon carbide zomshini we-photolithography.
| Izakhiwo | I-Founyl | ||
| Ukuminyana (g/cm3) | 2.98-3.02 | ||
| I-Young's Modulus (GPa) | 368 | ||
| Amandla e-Flexural (MPa) | 334 | ||
| Weibull | 8.35 | ||
| I-CTE (× 10-6/℃) | 100 ℃ | 2.8×10-6 | |
| 400℃ | 3.6×10-6 | ||
| 800℃ | 4.2×10-6 | ||
| 1000 ℃ | 4.6×10-6 | ||
| I-Thermal Conductivity(W/m·k) (20 ºC) | 160-180 | ||
| Isilinganiso sikaPoisson | 0.187 | ||
| Shear modulus (GPa) | 155 | ||